The IPB055N03LGATMA1 is a 30V N-Channel MOSFET from Infineon with a maximum continuous drain current of 50A and a maximum drain to source voltage of 30V. It features a TO-263-3 package and is designed for surface mount applications. The device operates over a temperature range of -55°C to 175°C and has a maximum power dissipation of 68W. The IPB055N03LGATMA1 is compliant with RoHS and Reach SVHC regulations.
PackageTO-263-3
MountingSurface Mount
Power68W
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Technical Specifications
Infineon IPB055N03LGATMA1 technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 3.2nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 68W |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Power Dissipation | 68W |
| Rds On Max | 5.5mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 6.7ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB055N03LGATMA1 Datasheet
Download the complete datasheet for Infineon IPB055N03LGATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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