Automotive N-channel Power MOSFET featuring 150V drain-source voltage and 130A continuous drain current. This single-element OptiMOS device offers a low 6.5mΩ drain-source on-resistance at 10V gate-source voltage. Housed in a 7-pin D2PAK (TO-263) surface-mount package with gull-wing leads, it supports a maximum power dissipation of 300W and operates from -55°C to 175°C.
PackageD2PAK
MountingSurface Mount
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Technical Specifications
Infineon IPB065N15N3 G technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
TO-263
Package/Case
D2PAK
Package Description
Double Deca Watt Package
Lead Shape
Gull-wing
Pin Count
7
PCB
6
Tab
Tab
Package Length (mm)
10.31(Max)
Package Width (mm)
9.45(Max)
Package Height (mm)
4.57(Max)
Seated Plane Height (mm)
4.82(Max)
Pin Pitch (mm)
1.27
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Quint Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
OptiMOS
Maximum Drain Source Voltage
150V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
130A
Maximum Drain Source Resistance
6.5@10VmOhm
Typical Gate Charge @ Vgs
70@10VnC
Typical Gate Charge @ 10V
70nC
Typical Input Capacitance @ Vds
5500@75VpF
Maximum Power Dissipation
300000mW
Min Operating Temperature
-55°C
Max Operating Temperature
175°C
Compliance
Cage Code
CG091
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
Yes
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Infineon IPB065N15N3 G Datasheet
Download the complete datasheet for Infineon IPB065N15N3 G to view detailed technical specifications.
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