IPB070N06LG

Name: IPB070N06LG Infineon
Brand: Infineon
SKU: IPB070N06LG

Power Field-Effect Transistor, 80A I(D), 60V, 0.0067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3

PackageTO-263-3

Current Rating80A

MountingSurface Mount

PolarityN-CHANNEL

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Infineon IPB070N06LG technical specifications.

Package/Case	TO-263-3
Continuous Drain Current (ID)	80A
Current Rating	80A
Drain to Source Breakdown Voltage	60V
Drain to Source Resistance	6.7mR
Drain to Source Voltage (Vdss)	60V
Fall Time	31ns
Gate to Source Voltage (Vgs)	20V
Input Capacitance	4.3nF
Lead Free	Lead Free
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	214W
Mount	Surface Mount
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	214W
Rds On Max	6.7mR
RoHS Compliant	Yes
Series	OptiMOS™
Turn-Off Delay Time	28ns
DC Rated Voltage	60V

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.