N-Channel Power MOSFET, 150V Vdss, 100A continuous drain current, and 7.2mR Rds On. This silicon, metal-oxide semiconductor FET features a TO-263-3 surface mount package. Maximum power dissipation is 300W, with operating temperatures ranging from -55°C to 175°C. The component is RoHS compliant and Halogen Free.
PackageTO-263-3
MountingSurface Mount
Power300W
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Technical Specifications
Infineon IPB072N15N3GATMA1 technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Resistance | 5.8mR |
| Drain to Source Voltage (Vdss) | 150V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 5.47nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 150V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| On-State Resistance | 7.2mR |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Power Dissipation | 300W |
| Rds On Max | 7.2mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB072N15N3GATMA1 Datasheet
Download the complete datasheet for Infineon IPB072N15N3GATMA1 to view detailed technical specifications.
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