N-channel Power MOSFET featuring 100V drain-source voltage and 80A continuous drain current. Offers a low on-state resistance of 8.3mΩ (7.2mΩ typical) for efficient power switching. Designed for surface mounting in a TO-263AB (D2PAK-3) package, this silicon metal-oxide semiconductor FET operates from -55°C to 175°C. Key switching characteristics include an 8ns fall time, 18ns turn-on delay, and 31ns turn-off delay.
MountingSurface Mount
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Technical Specifications
Infineon IPB083N10N3GATMA1 technical specifications.
General
| Continuous Drain Current (ID) | 80A |
| Drain to Source Resistance | 7.2mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 2.99nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| On-State Resistance | 8.3mR |
| Package Quantity | 1000 |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 31ns |
| Turn-On Delay Time | 18ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB083N10N3GATMA1 Datasheet
Download the complete datasheet for Infineon IPB083N10N3GATMA1 to view detailed technical specifications.
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