Infineon
IPB083N10N3GXT
Power Field-Effect Transistor, 80A I(D), 100V, 0.0083ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
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Technical Specifications
Infineon IPB083N10N3GXT technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-263AB |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon IPB083N10N3GXT Datasheet
Download the complete datasheet for Infineon IPB083N10N3GXT to view detailed technical specifications.
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