Infineon
IPB09N03LA
Power Field-Effect Transistor, 50A I(D), 25V, 0.0151ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN
PackageTO-263-3
Current Rating50A
MountingSurface Mount
Quick Jump:
Technical Specifications
Infineon IPB09N03LA technical specifications.
General
Package/Case
TO-263-3
Continuous Drain Current (ID)
50A
Current Rating
50A
Drain to Source Voltage (Vdss)
25V
Input Capacitance
1.642nF
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
63W
Mount
Surface Mount
Rds On Max
8.9mR
RoHS Compliant
No
Series
OptiMOS™
DC Rated Voltage
25V
Compliance
RoHS
Not Compliant
Datasheet
Infineon IPB09N03LA Datasheet
Download the complete datasheet for Infineon IPB09N03LA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
