Infineon
IPB100N04S2-04
Power Field-Effect Transistor, 100A I(D), 40V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
PackageTO-263-3
PolarityN-CHANNEL
Power300W
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Technical Specifications
Infineon IPB100N04S2-04 technical specifications.
General
Package/Case
TO-263-3
Continuous Drain Current (ID)
100A
Drain to Source Breakdown Voltage
40V
Drain to Source Voltage (Vdss)
40V
Fall Time
33ns
Gate to Source Voltage (Vgs)
20V
Halogen Free
Halogen Free
Input Capacitance
5.3nF
Max Dual Supply Voltage
40V
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
300W
Package Quantity
1000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
300W
Rds On Max
3.3mR
RoHS Compliant
Yes
Series
OptiMOS™
Turn-Off Delay Time
56ns
Compliance
RoHS
Compliant
Datasheet
Infineon IPB100N04S2-04 Datasheet
Download the complete datasheet for Infineon IPB100N04S2-04 to view detailed technical specifications.
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