N-Channel Power MOSFET, 200V Vds, 88A continuous drain current, and 10.7mΩ Rds(on). This silicon, metal-oxide semiconductor FET features a TO-263-3 package for surface mounting, with a maximum power dissipation of 300W and an operating temperature range of -55°C to 175°C. Includes 11ns fall time, 18ns turn-on delay, and 41ns turn-off delay. Halogen-free and RoHS compliant.
PackageTO-263-3
MountingSurface Mount
Power300W
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Technical Specifications
Infineon IPB107N20N3GATMA1 technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 88A |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 7.1nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 200V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 300W |
| Rds On Max | 10.7mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 41ns |
| Turn-On Delay Time | 18ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB107N20N3GATMA1 Datasheet
Download the complete datasheet for Infineon IPB107N20N3GATMA1 to view detailed technical specifications.
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