N-channel enhancement mode power MOSFET in a D2PAK (TO-263AA) surface-mount package. Features a 150V drain-source voltage, 83A continuous drain current, and low 10.8 mOhm drain-source resistance at 10V. OptiMOS process technology ensures high performance with a typical gate charge of 41 nC. This single-element transistor offers a maximum power dissipation of 214W and operates across a wide temperature range of -55°C to 175°C.
PackageD2PAK
MountingSurface Mount
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Technical Specifications
Infineon IPB108N15N3 G technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | TO-263 |
| Package/Case | D2PAK |
| Package Description | Double Deca Watt Package |
| Lead Shape | Gull-wing |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 10 |
| Package Width (mm) | 9.25 |
| Package Height (mm) | 4.4 |
| Seated Plane Height (mm) | 4.5 |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | TO-263AA |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | OptiMOS |
| Maximum Drain Source Voltage | 150V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 83A |
| Maximum Drain Source Resistance | 10.8@10VmOhm |
| Typical Gate Charge @ Vgs | 41@10VnC |
| Typical Gate Charge @ 10V | 41nC |
| Typical Input Capacitance @ Vds | 3230@75VpF |
| Maximum Power Dissipation | 214000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
Compliance
| Cage Code | CG091 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | Yes |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Infineon IPB108N15N3 G Datasheet
Download the complete datasheet for Infineon IPB108N15N3 G to view detailed technical specifications.
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