Infineon
IPB180P04P4-03
Power Field-Effect Transistor, 180A I(D), 40V, 0.0028ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7
PackageTO-263-7
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Technical Specifications
Infineon IPB180P04P4-03 technical specifications.
General
| Package/Case | TO-263-7 |
| Continuous Drain Current (ID) | 180A |
| Drain to Source Voltage (Vdss) | -40V |
| Fall Time | 81ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 4.4mm |
| Input Capacitance | 13.57nF |
| Length | 10mm |
| Max Dual Supply Voltage | -40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Packaging | Tape and Reel |
| Rds On Max | 2.8mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 72ns |
| Turn-On Delay Time | 48ns |
| Width | 9.25mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB180P04P4-03 Datasheet
Download the complete datasheet for Infineon IPB180P04P4-03 to view detailed technical specifications.
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