INFINEON

IPB200N25N3GATMA1

Datasheet

250V 64A N-Ch MOSFET TO-263-3 Surface Mount

Infineon

IPB200N25N3GATMA1

Name: IPB200N25N3GATMA1 Infineon
Brand: Infineon
SKU: IPB200N25N3GATMA1

250V 64A N-Ch MOSFET TO-263-3 Surface Mount

N-channel power MOSFET featuring 250V drain-to-source voltage and 64A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 20mΩ Rds On resistance, ideal for high-power applications. With a maximum power dissipation of 300W and an operating temperature range of -55°C to 175°C, it provides robust performance. Surface mountable in a TO-263-3 package, it boasts fast switching characteristics with a 12ns fall time.

PackageTO-263-3

MountingSurface Mount

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Technical Specifications

Infineon IPB200N25N3GATMA1 technical specifications.

General

Package/Case	TO-263-3
Continuous Drain Current (ID)	64A
Drain to Source Voltage (Vdss)	250V
Fall Time	12ns
Gate to Source Voltage (Vgs)	20V
Halogen Free	Halogen Free
Input Capacitance	7.1nF
Lead Free	Contains Lead
Max Dual Supply Voltage	250V
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	300W
Mount	Surface Mount
Packaging	Cut Tape
Radiation Hardening	No
Rds On Max	20mR
RoHS Compliant	Yes
Series	OptiMOS™
Turn-Off Delay Time	45ns
Turn-On Delay Time	18ns