
N-Channel Power MOSFET, 200V Vds, 34A Continuous Drain Current, 32mΩ Rds On. Features 136W Max Power Dissipation, 175°C Max Operating Temperature, and 2.35nF Input Capacitance. Surface mount TO-263-3 package with fast switching times, including 4ns fall time. RoHS compliant and halogen-free.
Infineon IPB320N20N3GATMA1 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 34A |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 2.35nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 200V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 136W |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Radiation Hardening | No |
| Rds On Max | 32mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 11ns |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPB320N20N3GATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
