N-channel MOSFET featuring 40V drain-source breakdown voltage and 45A continuous drain current. This component offers a low 7.6mΩ Rds On and is housed in a TO-263-3 package. Operating across a wide temperature range of -55°C to 175°C, it boasts a 45W power dissipation and fast switching times with a 4ns turn-on delay. The device is RoHS compliant and Halogen Free.
PackageTO-263-3
PolarityN-CHANNEL
Power45W
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Technical Specifications
Infineon IPB45N04S4L-08 technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 45A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 7.6mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 18ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 4.4mm |
| Input Capacitance | 2.34nF |
| Length | 10mm |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 45W |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 45W |
| Rds On Max | 7.6mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 11ns |
| Turn-On Delay Time | 4ns |
| Width | 9.25mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB45N04S4L-08 Datasheet
Download the complete datasheet for Infineon IPB45N04S4L-08 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.