IPB47N10SL-26

N-Channel Power MOSFET, 100V Drain-Source Voltage, 47A Continuous Drain Current, and 26mΩ Rds On. Features a 175W maximum power dissipation and operates across a wide temperature range from -55°C to 175°C. This silicon Metal-oxide Semiconductor FET is housed in a TO-263-3 package, offering fast switching speeds with turn-on and turn-off delay times of 50ns and a fall time of 70ns. The component is RoHS compliant and Halogen Free, supplied on tape and reel.