N-Channel Power MOSFET, TO-263 package, featuring 100V drain-source breakdown voltage and 20A continuous drain current. Offers low on-resistance of 49mΩ at 10Vgs, 5Vgs. With a maximum power dissipation of 44W and an operating temperature range of -55°C to 175°C, this silicon Metal-oxide Semiconductor FET is designed for surface mounting. Includes fast switching characteristics with turn-on delay of 10ns and fall time of 3ns.
PackageTO-263
MountingSurface Mount
PolarityN-CHANNEL
Power44W
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Technical Specifications
Infineon IPB50CN10NG technical specifications.
General
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 49mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.09nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 44W |
| Mount | Surface Mount |
| Nominal Vgs | 3V |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 44W |
| Rds On Max | 50mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 10ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB50CN10NG Datasheet
Download the complete datasheet for Infineon IPB50CN10NG to view detailed technical specifications.
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