N-channel Power MOSFET featuring 600V drain-source voltage and 0.08 ohm on-resistance. This single-element, silicon, metal-oxide semiconductor field-effect transistor is housed in a TO-263AB package. It offers a minimum operating temperature of -55°C and is designed with a single terminal position.
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Technical Specifications
Infineon IPB60R080P7ATMA1 technical specifications.
General
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-263AB |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon IPB60R080P7ATMA1 Datasheet
Download the complete datasheet for Infineon IPB60R080P7ATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.