N-Channel Power MOSFET, 600V breakdown voltage, 31A continuous drain current, and 99mΩ Rds On. This silicon, Metal-oxide Semiconductor FET features a TO-263-3 package, 255W maximum power dissipation, and operates from -55°C to 150°C. Includes 10ns turn-on and 60ns turn-off delay times, with 2.8nF input capacitance. RoHS and Halogen Free compliant.
PackageTO-263-3
Current Rating50A
Power255W
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Technical Specifications
Infineon IPB60R099CP technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 31A |
| Current Rating | 50A |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 4.57mm |
| Input Capacitance | 2.8nF |
| Lead Free | Lead Free |
| Length | 10.31mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 255W |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 255W |
| Radiation Hardening | No |
| Rds On Max | 99mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | 25V |
| Width | 9.45mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB60R099CP Datasheet
Download the complete datasheet for Infineon IPB60R099CP to view detailed technical specifications.
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