Infineon
IPB60R199CPAATMA1
Power Field-Effect Transistor, 16A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
PackageTO-263-3
MountingSurface Mount
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Technical Specifications
Infineon IPB60R199CPAATMA1 technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 16A |
| Drain to Source Voltage (Vdss) | 600V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.52nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 600V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 139W |
| Mount | Surface Mount |
| Rds On Max | 199mR |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, CoolMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB60R199CPAATMA1 Datasheet
Download the complete datasheet for Infineon IPB60R199CPAATMA1 to view detailed technical specifications.
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