N-Channel Power MOSFET, 600V Drain to Source Breakdown Voltage, 6.8A Continuous Drain Current, and 520mΩ Drain to Source Resistance. This silicon Metal-oxide Semiconductor FET features a 1-element design with a 66W maximum power dissipation and operates within a temperature range of -55°C to 150°C. Packaged in a TO-263-3 SMD/SMT format, it offers a 16ns fall time and 17ns turn-on delay time. RoHS compliant and halogen-free.
PackageTO-263-3
PolarityN-CHANNEL
Power66W
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Technical Specifications
Infineon IPB60R520CP technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 6.8A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 520mR |
| Drain to Source Voltage (Vdss) | 600V |
| Dual Supply Voltage | 650V |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 630pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 66W |
| Nominal Vgs | 3V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 66W |
| Radiation Hardening | No |
| Rds On Max | 520mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Termination | SMD/SMT |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 74ns |
| Turn-On Delay Time | 17ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB60R520CP Datasheet
Download the complete datasheet for Infineon IPB60R520CP to view detailed technical specifications.
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