N-Channel Power MOSFET, 600V breakdown voltage, 6.1A continuous drain current, and 600mΩ Rds On. Features include 17ns turn-on delay, 75ns turn-off delay, and 17ns fall time. Operates within a -55°C to 150°C temperature range with 60W power dissipation. Packaged in a TO-263-3 SMD/SMT format, this silicon Metal-oxide Semiconductor FET is RoHS compliant and Halogen Free.
PackageTO-263-3
PolarityN-CHANNEL
Power60W
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Technical Specifications
Infineon IPB60R600CP technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 6.1A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 600mR |
| Dual Supply Voltage | 650V |
| Fall Time | 17ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 550pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 60W |
| Nominal Vgs | 3V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 60W |
| Rds On Max | 600mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Termination | SMD/SMT |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 75ns |
| Turn-On Delay Time | 17ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB60R600CP Datasheet
Download the complete datasheet for Infineon IPB60R600CP to view detailed technical specifications.
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