N-Channel Power MOSFET featuring 650V drain-source voltage and 31.2A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low on-state resistance of 110mΩ (typ.) and 99mΩ (max.). Designed for high-power applications with a maximum power dissipation of 277.8W, it operates within a temperature range of -40°C to 150°C. The component is packaged in a TO-263-3 (D2PAK) surface-mount package, supplied on tape and reel, and is RoHS compliant.
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Infineon IPB65R110CFDAATMA1 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 31.2A |
| Drain to Source Resistance | 99mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 3.24nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 650V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 277.8W |
| Number of Elements | 1 |
| On-State Resistance | 110mR |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Power Dissipation | 277.8W |
| Radiation Hardening | No |
| Rds On Max | 110mR |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, CoolMOS™ |
| Turn-Off Delay Time | 68ns |
| Turn-On Delay Time | 16ns |
| RoHS | Compliant |
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