Infineon
IPB65R660CFDAXT
Power Field-Effect Transistor, 6A I(D), 650V, 0.66ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252, DPAK-3/2
PackageTO-263
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Technical Specifications
Infineon IPB65R660CFDAXT technical specifications.
General
| Package/Case | TO-263 |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB65R660CFDAXT Datasheet
Download the complete datasheet for Infineon IPB65R660CFDAXT to view detailed technical specifications.
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