N-channel power MOSFET featuring 55V drain-source breakdown voltage and 80A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 0.0084 ohm Rds On resistance and 250W maximum power dissipation. Designed for high-efficiency switching applications, it operates within a -55°C to 175°C temperature range and is packaged in a TO-263-3 for surface-mount integration. Key switching characteristics include a 11ns turn-on delay and 20ns fall time.
PackageTO-263-3
PolarityN-CHANNEL
Power250W
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Technical Specifications
Infineon IPB80N06S2L-06 technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 4.4mm |
| Input Capacitance | 3.8nF |
| Length | 10mm |
| Max Dual Supply Voltage | 55V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250W |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 250W |
| Radiation Hardening | No |
| Rds On Max | 6mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 11ns |
| Width | 9.25mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB80N06S2L-06 Datasheet
Download the complete datasheet for Infineon IPB80N06S2L-06 to view detailed technical specifications.
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