N-channel power MOSFET featuring 60V drain-source breakdown voltage and 80A continuous drain current. This silicon, metal-oxide semiconductor field-effect transistor offers a low 4.8mΩ drain-source resistance. Designed for high-power applications, it operates within a temperature range of -55°C to 175°C and boasts a maximum power dissipation of 107W. Packaged in a TO-263-3 configuration, it supports tape and reel packaging.
PackageTO-263-3
PolarityN-CHANNEL
Power107W
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Technical Specifications
Infineon IPB80N06S4L-05 technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 4.8mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 16V |
| Halogen Free | Halogen Free |
| Height | 4.4mm |
| Input Capacitance | 8.18nF |
| Length | 10mm |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 107W |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 107W |
| Rds On Max | 4.8mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 80ns |
| Turn-On Delay Time | 14ns |
| Width | 9.25mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB80N06S4L-05 Datasheet
Download the complete datasheet for Infineon IPB80N06S4L-05 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.