N-channel power MOSFET featuring 60V drain-source breakdown voltage and 80A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 6.4mΩ drain-source resistance (Rds On Max) and 79W power dissipation. Packaged in a TO-263-3 format, it operates from -55°C to 175°C and includes fast switching characteristics with a 8ns fall time. Halogen-free and RoHS compliant, this component is supplied on tape and reel.
PackageTO-263-3
PolarityN-CHANNEL
Power79W
Quick Jump:
Technical Specifications
Infineon IPB80N06S4L-07 technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 6.4mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 16V |
| Halogen Free | Halogen Free |
| Height | 4.4mm |
| Input Capacitance | 5.68nF |
| Length | 10mm |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 79W |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 79W |
| Rds On Max | 6.4mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 10ns |
| Width | 9.25mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB80N06S4L-07 Datasheet
Download the complete datasheet for Infineon IPB80N06S4L-07 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.