The IPB80N08S2L-07 is a high-power N-channel MOSFET from Infineon with a maximum drain current of 80A and a maximum drain-to-source voltage of 75V. It features a fast switching time with a fall time of 21ns and a turn-off delay time of 85ns. The device is packaged in a TO-263-3 package and is suitable for high-power applications. The operating temperature range is from -55°C to 175°C, and the device is compliant with RoHS and Reach SVHC regulations.
PackageTO-263-3
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Technical Specifications
Infineon IPB80N08S2L-07 technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Voltage (Vdss) | 75V |
| Fall Time | 21ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 4.57mm |
| Input Capacitance | 10.74nF |
| Lead Free | Lead Free |
| Length | 10.31mm |
| Max Dual Supply Voltage | 75V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 158W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Rds On Max | 6.8mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 85ns |
| Turn-On Delay Time | 19ns |
| Width | 9.45mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB80N08S2L-07 Datasheet
Download the complete datasheet for Infineon IPB80N08S2L-07 to view detailed technical specifications.
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