N-channel power MOSFET featuring 60V drain-source breakdown voltage and 90A continuous drain current. This silicon Metal-Oxide Semiconductor FET offers a low 3.7mΩ drain-source resistance (Rds On Max) and 150W maximum power dissipation. Designed for high-efficiency switching applications, it operates within a temperature range of -55°C to 175°C and is packaged in a TO-263-3 surface-mount package. Key switching characteristics include a 30ns turn-on delay and 40ns turn-off delay.
PackageTO-263-3
PolarityN-CHANNEL
Power150W
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Technical Specifications
Infineon IPB90N06S4-04 technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 90A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 3.7mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 4.4mm |
| Input Capacitance | 10.4nF |
| Length | 10mm |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 150W |
| Rds On Max | 3.7mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 30ns |
| Width | 9.25mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB90N06S4-04 Datasheet
Download the complete datasheet for Infineon IPB90N06S4-04 to view detailed technical specifications.
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