N-channel silicon MOSFET featuring a low on-resistance of 0.005 ohms and a continuous drain current capability of 80A. This power field-effect transistor operates at a drain-source voltage of 100V and is housed in a TO-252 package. Designed with a single element and two terminals, it offers a minimum operating temperature of -55°C.
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Technical Specifications
Infineon IPD050N10N5ATMA1 technical specifications.
General
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-252 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon IPD050N10N5ATMA1 Datasheet
Download the complete datasheet for Infineon IPD050N10N5ATMA1 to view detailed technical specifications.
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