N-Channel Power MOSFET, TO-252 package, featuring 30V drain-source breakdown voltage and 50A continuous drain current. Offers a low 6mΩ drain-source on-resistance (Rds On Max) and 56W maximum power dissipation. Operates across a wide temperature range from -55°C to 175°C, with fast switching characteristics including 3ns fall time and 5ns turn-on delay. This silicon, metal-oxide semiconductor FET is RoHS compliant and packaged in tape and reel.
PackageTO-252-3
PolarityN-CHANNEL
Power56W
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Technical Specifications
Infineon IPD060N03LG technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 6mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 2.41mm |
| Input Capacitance | 2.4nF |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 56W |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 56W |
| Rds On Max | 6mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 10V |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 5ns |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD060N03LG Datasheet
Download the complete datasheet for Infineon IPD060N03LG to view detailed technical specifications.
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