N-channel silicon MOSFET for power applications, featuring 100V drain-source voltage and 90A continuous drain current. Offers low on-state resistance of 6.8mΩ at a 10V gate-source voltage. This surface-mount device operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 150W. Packaged in a TO-252-3 plastic package, it is RoHS compliant and supplied on tape and reel.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Infineon IPD068N10N3GATMA1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 90A |
| Drain to Source Resistance | 5.7mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 4.91nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| On-State Resistance | 6.8mR |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Power Dissipation | 150W |
| Radiation Hardening | No |
| Rds On Max | 6.8mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 37ns |
| Turn-On Delay Time | 19ns |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPD068N10N3GATMA1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
