N-channel silicon MOSFET for power applications, featuring 100V drain-source voltage and 90A continuous drain current. Offers low on-state resistance of 6.8mΩ at a 10V gate-source voltage. This surface-mount device operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 150W. Packaged in a TO-252-3 plastic package, it is RoHS compliant and supplied on tape and reel.
PackageTO-252-3
MountingSurface Mount
Power150W
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Technical Specifications
Infineon IPD068N10N3GATMA1 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 90A |
| Drain to Source Resistance | 5.7mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 4.91nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| On-State Resistance | 6.8mR |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Power Dissipation | 150W |
| Radiation Hardening | No |
| Rds On Max | 6.8mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 37ns |
| Turn-On Delay Time | 19ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD068N10N3GATMA1 Datasheet
Download the complete datasheet for Infineon IPD068N10N3GATMA1 to view detailed technical specifications.
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