P-channel MOSFET transistor, surface mount, TO-252 package. Features -30V drain-source voltage, 70A continuous drain current, and 6.8mΩ Rds On. Operates with a -1.5V threshold voltage and a -10V gate-source voltage rating. Offers 100W power dissipation and a maximum operating temperature of 175°C.
PackageTO-252
MountingSurface Mount
Power100W
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Technical Specifications
Infineon IPD068P03L3GATMA1 technical specifications.
General
Package/Case
TO-252
Continuous Drain Current (ID)
70A
Drain to Source Voltage (Vdss)
-30V
Fall Time
31ns
Gate to Source Voltage (Vgs)
20V
Halogen Free
Not Halogen Free
Input Capacitance
7.72nF
Lead Free
Contains Lead
Max Dual Supply Voltage
-30V
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
100W
Mount
Surface Mount
Number of Elements
1
Packaging
Tape and Reel
Power Dissipation
100W
Radiation Hardening
No
Rds On Max
6.8mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
OptiMOS™
Threshold Voltage
-1.5V
Turn-Off Delay Time
84ns
Turn-On Delay Time
11ns
Compliance
RoHS
Compliant
Datasheet
Infineon IPD068P03L3GATMA1 Datasheet
Download the complete datasheet for Infineon IPD068P03L3GATMA1 to view detailed technical specifications.
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