P-channel MOSFET transistor, surface mount, TO-252 package. Features -30V drain-source voltage, 70A continuous drain current, and 6.8mΩ Rds On. Operates with a -1.5V threshold voltage and a -10V gate-source voltage rating. Offers 100W power dissipation and a maximum operating temperature of 175°C.
PackageTO-252
MountingSurface Mount
Power100W
Quick Jump:
Technical Specifications
Infineon IPD068P03L3GATMA1 technical specifications.
General
| Package/Case | TO-252 |
| Continuous Drain Current (ID) | 70A |
| Drain to Source Voltage (Vdss) | -30V |
| Fall Time | 31ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Not Halogen Free |
| Input Capacitance | 7.72nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | -30V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 100W |
| Radiation Hardening | No |
| Rds On Max | 6.8mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | -1.5V |
| Turn-Off Delay Time | 84ns |
| Turn-On Delay Time | 11ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD068P03L3GATMA1 Datasheet
Download the complete datasheet for Infineon IPD068P03L3GATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
