The IPD09N03LBG is a surface-mount N-channel MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 58W and a maximum drain to source breakdown voltage of 30V. The device is lead-free and RoHS compliant, packaged in a TO-252-3 case with a package quantity of 2500 units per reel.
PackageTO-252-3
Current Rating50A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Infineon IPD09N03LBG technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 50A |
| Current Rating | 50A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.6nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 58W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 58W |
| Rds On Max | 9.1mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 20ns |
| DC Rated Voltage | 30V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD09N03LBG Datasheet
Download the complete datasheet for Infineon IPD09N03LBG to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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