N-Channel Power MOSFET, 150V Vds, 50A Continuous Drain Current, and 20mΩ Rds On. Features include 150W maximum power dissipation, 1.82nF input capacitance, and fast switching times with a 6ns fall time. This silicon, metal-oxide semiconductor FET is housed in a TO-252-3 DPAK package and operates from -55°C to 175°C. It is RoHS compliant and lead-free.
PackageTO-252-3
Voltage150V
Current50A
PolarityN-CHANNEL
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Technical Specifications
Infineon IPD200N15N3G technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 50A |
| Current | 50A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Resistance | 20mR |
| Drain to Source Voltage (Vdss) | 150V |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.41mm |
| Input Capacitance | 1.82nF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 150W |
| Rds On Max | 20mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 23ns |
| Turn-On Delay Time | 14ns |
| Voltage | 150V |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD200N15N3G Datasheet
Download the complete datasheet for Infineon IPD200N15N3G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.