
N-channel power MOSFET, surface mountable in a TO-252-3 (DPAK) package. Features a 60V drain-source breakdown voltage and a continuous drain current rating of 30A. Offers a low on-resistance of 23mR at a 10V gate-source voltage. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 100W. Includes fast switching characteristics with turn-on delay of 10ns and fall time of 24ns. This component is RoHS compliant and lead-free.
Infineon IPD230N06NG technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 30A |
| Current Rating | 30A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 23mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 24ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.1nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 100W |
| Rds On Max | 23mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 26ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | 60V |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPD230N06NG to view detailed technical specifications.
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