N-channel silicon Metal-oxide Semiconductor Field-Effect Transistor (MOSFET) designed for power applications. Features a 100V drain-to-source breakdown voltage and a low 25mΩ drain-to-source resistance at a continuous drain current of 35A. This single-element device operates within a temperature range of -55°C to 175°C and offers a maximum power dissipation of 71W. Packaged in a TO-252-3 plastic package, it boasts fast switching characteristics with turn-on delay times of 10ns and fall times of 3ns.
PackageTO-252-3
PolarityN-CHANNEL
Power71W
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Technical Specifications
Infineon IPD25CN10NG technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 35A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 25mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.41mm |
| Input Capacitance | 2.07nF |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 71W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 71W |
| Rds On Max | 25mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 13ns |
| Turn-On Delay Time | 10ns |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD25CN10NG Datasheet
Download the complete datasheet for Infineon IPD25CN10NG to view detailed technical specifications.
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