IPD30N06S3-24

Power Field-Effect Transistor, 30A I(D), 55V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, TO-252, 3 PIN

PackageTO-252

PolarityN-CHANNEL

Power45W

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Infineon IPD30N06S3-24 technical specifications.

Package/Case	TO-252
Continuous Drain Current (ID)	30A
Drain to Source Breakdown Voltage	55V
Fall Time	26ns
Gate to Source Voltage (Vgs)	20V
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	45W
RoHS Compliant	Yes
Turn-Off Delay Time	13ns

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.