N-channel power MOSFET featuring 200V drain-source breakdown voltage and 34A continuous drain current. Offers low 32mΩ drain-source resistance and 136W maximum power dissipation. Designed with a 3V threshold voltage, 2.35nF input capacitance, and fast switching times including a 4ns fall time. Encased in a TO-252 package, this silicon metal-oxide semiconductor FET operates from -55°C to 175°C and is RoHS compliant.
PackageTO-252-3
PolarityN-CHANNEL
Power136W
Quick Jump:
Technical Specifications
Infineon IPD320N20N3G technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 34A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 32mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.41mm |
| Input Capacitance | 2.35nF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 136W |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 136W |
| Radiation Hardening | No |
| Rds On Max | 32mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 11ns |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD320N20N3G Datasheet
Download the complete datasheet for Infineon IPD320N20N3G to view detailed technical specifications.
No datasheet is available for this part.
Product Images
