N-channel power MOSFET featuring 100V drain-source breakdown voltage and 27A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 33mΩ Rds On resistance. Designed for high-efficiency power switching, it operates within a temperature range of -55°C to 175°C with a maximum power dissipation of 58W. The component is housed in a TO-252-3 package, is RoHS compliant, and halogen-free.
PackageTO-252-3
PolarityN-CHANNEL
Power58W
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Technical Specifications
Infineon IPD33CN10NG technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 27A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 33mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 2.413mm |
| Input Capacitance | 1.57nF |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 58W |
| Nominal Vgs | 3V |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 58W |
| Rds On Max | 33mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 17ns |
| Turn-On Delay Time | 11ns |
| Width | 6.223mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD33CN10NG Datasheet
Download the complete datasheet for Infineon IPD33CN10NG to view detailed technical specifications.
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