IPD50N06S3L-06

Power Field-Effect Transistor, 50A I(D), 55V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3

PackageTO-252

PolarityN-CHANNEL

Power136W

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Infineon IPD50N06S3L-06 technical specifications.

Package/Case	TO-252
Continuous Drain Current (ID)	50A
Drain to Source Breakdown Voltage	55V
Fall Time	115ns
Gate to Source Voltage (Vgs)	16V
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	136W
RoHS Compliant	Yes
Turn-Off Delay Time	75ns

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.