The IPD50N06S3L-08 is a high-power N-channel MOSFET with a continuous drain current rating of 50A and a breakdown voltage of 55V. It features a low drain to source resistance of 7.8mR and a fast switching time with a fall time of 50ns. The device is packaged in a TO-252 package and is suitable for operation over a temperature range of -55°C to 175°C. It is also RoHS compliant and available in tape and reel packaging.
PackageTO-252
PolarityN-CHANNEL
Power107W
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Technical Specifications
Infineon IPD50N06S3L-08 technical specifications.
General
| Package/Case | TO-252 |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 7.8mR |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 16V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 107W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 47ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD50N06S3L-08 Datasheet
Download the complete datasheet for Infineon IPD50N06S3L-08 to view detailed technical specifications.
No datasheet is available for this part.