IPD50N06S3L-08

Power Field-Effect Transistor, 50A I(D), 55V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3

PackageTO-252

PolarityN-CHANNEL

Power107W

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Infineon IPD50N06S3L-08 technical specifications.

Package/Case	TO-252
Continuous Drain Current (ID)	50A
Drain to Source Breakdown Voltage	55V
Drain to Source Resistance	7.8mR
Fall Time	50ns
Gate to Source Voltage (Vgs)	16V
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	107W
RoHS Compliant	Yes
Turn-Off Delay Time	47ns

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.