The IPD50N06S4-09 is a 60V N-Channel MOSFET with a continuous drain current of 50A. It features a TO-252-3 package and is halogen free. The device has an input capacitance of 3.785nF and a maximum power dissipation of 71W. It operates over a temperature range of -55°C to 175°C and is RoHS compliant.
PackageTO-252-3
Power71W
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Technical Specifications
Infineon IPD50N06S4-09 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 2.3mm |
| Input Capacitance | 3.785nF |
| Length | 6.5mm |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 71W |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Power Dissipation | 71W |
| Rds On Max | 9mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 15ns |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD50N06S4-09 Datasheet
Download the complete datasheet for Infineon IPD50N06S4-09 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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