N-channel power MOSFET featuring 60V drain-source voltage and 50A continuous drain current. This surface-mount device offers a low 7.8mΩ on-state resistance and 71W power dissipation. Designed for automotive applications with AEC-Q101 qualification, it operates from -55°C to 175°C and includes fast switching characteristics with an 8ns fall time and 9ns turn-on delay. The TO-252 package ensures efficient thermal management.
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Infineon IPD50N06S4L08ATMA2 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 16V |
| Halogen Free | Halogen Free |
| Input Capacitance | 4.78nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 71W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| On-State Resistance | 7.8mR |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 71W |
| Rds On Max | 7.8mR |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 9ns |
| Weight | 0.139332oz |
| RoHS | Compliant |
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