N-channel enhancement mode power MOSFET featuring OptiMOS 3 process technology. Delivers 150V drain-source voltage and 21A continuous drain current. Surface mountable in a 3-pin DPAK (TO-252AA) package with gull-wing leads. Offers low on-resistance of 53mOhm at 10V Vgs and a maximum power dissipation of 68W. Operates across a wide temperature range from -55°C to 175°C.
PackageDPAK
MountingSurface Mount
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Technical Specifications
Infineon IPD530N15N3 G technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | TO-252 |
| Package/Case | DPAK |
| Package Description | Deca Watt Package |
| Lead Shape | Gull-wing |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 6.73(Max) |
| Package Width (mm) | 6.22(Max) |
| Package Height (mm) | 2.41(Max) |
| Seated Plane Height (mm) | 2.56(Max) |
| Pin Pitch (mm) | 2.29 |
| Mounting | Surface Mount |
| Jedec | TO-252AA |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | OptiMOS 3 |
| Maximum Drain Source Voltage | 150V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 21A |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Drain Source Resistance | 53@10VmOhm |
| Typical Gate Charge @ Vgs | 8.7@10VnC |
| Typical Gate Charge @ 10V | 8.7nC |
| Typical Input Capacitance @ Vds | 667@75VpF |
| Maximum Power Dissipation | 68000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
Compliance
| Cage Code | CG091 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | Yes |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Infineon IPD530N15N3 G Datasheet
Download the complete datasheet for Infineon IPD530N15N3 G to view detailed technical specifications.
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