Infineon
IPD60N10S4-12
Power Field-Effect Transistor, 60A I(D), 100V, 0.0122ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO252-3-313, 3/2 PIN
Quick Jump:
Technical Specifications
Infineon IPD60N10S4-12 technical specifications.
General
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-252 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon IPD60N10S4-12 Datasheet
Download the complete datasheet for Infineon IPD60N10S4-12 to view detailed technical specifications.
No datasheet is available for this part.