N-channel power MOSFET, 600V breakdown voltage, 0.18 ohm on-resistance, designed for high-efficiency power switching applications. Features a single silicon element within a TO-252 DPAK-3/2 package, offering a minimum operating temperature of -40°C. This metal-oxide semiconductor field-effect transistor is suitable for demanding electronic circuits requiring robust performance.
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Technical Specifications
Infineon IPD60R180P7SAUMA1 technical specifications.
General
| Number of Terminals | 2 |
| Min Operating Temperature | -40 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-252 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon IPD60R180P7SAUMA1 Datasheet
Download the complete datasheet for Infineon IPD60R180P7SAUMA1 to view detailed technical specifications.
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