N-channel power MOSFET with 600V drain-source voltage and 9A continuous drain current. Features 350mΩ drain-source resistance, 83W maximum power dissipation, and TO-252-3 surface-mount package. Operates from -55°C to 150°C, with 10ns turn-on delay and 5ns fall time. This RoHS compliant component is supplied in tape and reel packaging.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Infineon IPD60R385CPATMA1 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Resistance | 350mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 5ns |
| FET Type | 1 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 790pF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 600V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 83W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 385mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ CP |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.139332oz |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD60R385CPATMA1 Datasheet
Download the complete datasheet for Infineon IPD60R385CPATMA1 to view detailed technical specifications.
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