N-channel Power MOSFET, 600V drain-source voltage, 7.3A continuous drain current, and 600mΩ drain-source resistance at 10V. Features CoolMOS process technology, 20.5nC typical gate charge, and 440pF typical input capacitance. Housed in a 3-pin DPAK (TO-252AA) surface-mount package with gull-wing leads, offering a maximum power dissipation of 63W and operating temperature range of -55°C to 150°C.
PackageDPAK
MountingSurface Mount
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Technical Specifications
Infineon IPD60R600C6 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
TO-252
Package/Case
DPAK
Package Description
Deca Watt Package
Lead Shape
Gull-wing
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
6.73(Max)
Package Width (mm)
6.22(Max)
Package Height (mm)
2.41(Max)
Seated Plane Height (mm)
2.56(Max)
Pin Pitch (mm)
2.29
Package Material
Plastic
Mounting
Surface Mount
Jedec
TO-252AA
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
CoolMOS
Maximum Drain Source Voltage
600V
Maximum Gate Source Voltage
20V
Maximum Continuous Drain Current
7.3A
Maximum Drain Source Resistance
600@10VmOhm
Typical Gate Charge @ Vgs
20.5@10VnC
Typical Gate Charge @ 10V
20.5nC
Typical Input Capacitance @ Vds
440@100VpF
Maximum Power Dissipation
63000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
CG091
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
Yes
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Infineon IPD60R600C6 Datasheet
Download the complete datasheet for Infineon IPD60R600C6 to view detailed technical specifications.
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