N-Channel Power MOSFET, 600V Drain to Source Breakdown Voltage, 6.1A Continuous Drain Current, and 600mΩ Drain to Source Resistance. Features include a 60W maximum power dissipation, 17ns turn-on delay, and 75ns turn-off delay. This silicon, Metal-Oxide Semiconductor FET is housed in a TO-252-3 SMD/SMT package. Operating temperature range is -55°C to 150°C.
PackageTO-252-3
PolarityN-CHANNEL
Power60W
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Technical Specifications
Infineon IPD60R600CP technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
6.1A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
600mR
Drain to Source Voltage (Vdss)
600V
Dual Supply Voltage
650V
Fall Time
17ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
550pF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
60W
Nominal Vgs
3V
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
60W
Rds On Max
600mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
OptiMOS™
Termination
SMD/SMT
Threshold Voltage
3V
Turn-Off Delay Time
75ns
Turn-On Delay Time
17ns
Compliance
RoHS
Compliant
Datasheet
Infineon IPD60R600CP Datasheet
Download the complete datasheet for Infineon IPD60R600CP to view detailed technical specifications.
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