N-channel silicon power MOSFET featuring 600V drain-source voltage and 0.6 ohm on-resistance. This single-element, metal-oxide semiconductor field-effect transistor is housed in a TO-252 DPAK-3/2 package, designed for efficient power switching applications. It offers a minimum operating temperature of -40°C and is configured with two terminals.
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Technical Specifications
Infineon IPD60R600P7SAUMA1 technical specifications.
General
| Number of Terminals | 2 |
| Min Operating Temperature | -40 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-252 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon IPD60R600P7SAUMA1 Datasheet
Download the complete datasheet for Infineon IPD60R600P7SAUMA1 to view detailed technical specifications.
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